guest ::
| Home > Publications database > Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111) |
| Home > Publications database > Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111) |
| Journal Article | FZJ-2017-06569 |
; ; ; ; ; ; ; ; ; ; ;
2017
Inst.
Woodbury, NY
This record in other databases: 
Please use a persistent id in citations: http://hdl.handle.net/2128/15288 doi:10.1103/PhysRevB.96.035301
Abstract: We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1×1) surface, we find Te to form a Te/Si(111)-(1×1) reconstruction to saturate the substrate bonds. A problem arising is that such an interface layer can potentially be highly conductive, undermining the applicability of the on-top grown films in electric devices. We perform here a detailed structural analysis of the pristine Te termination and present direct measurements of its electrical conductivity by in situ distance-dependent four-probe measurements. The experimental results are analyzed with respect to density functional theory calculations and the implications of the interface termination with respect to the electrical conductivity of chalcogenide-based topological insulator thin films are discussed. In detail, we find a Te/Si(111)-(1×1) interface conductivity of σTe2D=2.6(5)×10−7S/□, which is small compared to the typical conductivity of topological surface states.
; 
; 
; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
|
The record appears in these collections: |
PDF
PDF (PDFA)