% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Lpke:837709,
      author       = {Lüpke, Felix and Just, Sven and Bihlmayer, Gustav and
                      Lanius, Martin and Luysberg, Martina and Doležal, Jiří
                      and Neumann, Elmar and Cherepanov, Vasily and Ošt'ádal,
                      Ivan and Mussler, Gregor and Grützmacher, Detlev and
                      Voigtländer, Bert},
      title        = {{C}halcogenide-based van der {W}aals epitaxy: {I}nterface
                      conductivity of tellurium on {S}i(111)},
      journal      = {Physical review / B},
      volume       = {96},
      number       = {3},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2017-06569},
      pages        = {035301},
      year         = {2017},
      abstract     = {We present a combined experimental and theoretical analysis
                      of a Te rich interface layer which represents a template for
                      chalcogenide-based van der Waals epitaxy on Si(111). On a
                      clean Si(111)-(1×1) surface, we find Te to form a
                      Te/Si(111)-(1×1) reconstruction to saturate the substrate
                      bonds. A problem arising is that such an interface layer can
                      potentially be highly conductive, undermining the
                      applicability of the on-top grown films in electric devices.
                      We perform here a detailed structural analysis of the
                      pristine Te termination and present direct measurements of
                      its electrical conductivity by in situ distance-dependent
                      four-probe measurements. The experimental results are
                      analyzed with respect to density functional theory
                      calculations and the implications of the interface
                      termination with respect to the electrical conductivity of
                      chalcogenide-based topological insulator thin films are
                      discussed. In detail, we find a Te/Si(111)-(1×1) interface
                      conductivity of σTe2D=2.6(5)×10−7S/□, which is small
                      compared to the typical conductivity of topological surface
                      states.},
      cin          = {PGI-3 / PGI-1 / PGI-9 / ER-C-1 / HNF / IAS-1 / JARA-FIT /
                      JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106 / I:(DE-Juel1)PGI-1-20110106 /
                      I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ER-C-1-20170209 /
                      I:(DE-Juel1)HNF-20170116 / I:(DE-Juel1)IAS-1-20090406 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000405023400007},
      doi          = {10.1103/PhysRevB.96.035301},
      url          = {https://juser.fz-juelich.de/record/837709},
}