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| Hauptseite > Publikationsdatenbank > Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111) > print |
| Hauptseite > Publikationsdatenbank > Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111) > print |
| 001 | 837709 | ||
| 005 | 20230426083152.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevB.96.035301 |2 doi |
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| 024 | 7 | _ | |a 2469-9950 |2 ISSN |
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| 100 | 1 | _ | |a Lüpke, Felix |0 P:(DE-Juel1)162163 |b 0 |u fzj |
| 245 | _ | _ | |a Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111) |
| 260 | _ | _ | |a Woodbury, NY |c 2017 |b Inst. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1×1) surface, we find Te to form a Te/Si(111)-(1×1) reconstruction to saturate the substrate bonds. A problem arising is that such an interface layer can potentially be highly conductive, undermining the applicability of the on-top grown films in electric devices. We perform here a detailed structural analysis of the pristine Te termination and present direct measurements of its electrical conductivity by in situ distance-dependent four-probe measurements. The experimental results are analyzed with respect to density functional theory calculations and the implications of the interface termination with respect to the electrical conductivity of chalcogenide-based topological insulator thin films are discussed. In detail, we find a Te/Si(111)-(1×1) interface conductivity of σTe2D=2.6(5)×10−7S/□, which is small compared to the typical conductivity of topological surface states. |
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| 773 | 1 | 8 | |a 10.1103/physrevb.96.035301 |b American Physical Society (APS) |d 2017-07-05 |n 3 |p 035301 |3 journal-article |2 Crossref |t Physical Review B |v 96 |y 2017 |x 2469-9950 |
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