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Conference Presentation (Other) FZJ-2017-06659
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Random telegraph noise analysis in Redox-based Resistive Switching Devices Using KMC Simulations

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2017

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, KamakuraKamakura, Japan, 7 Sep 2017 - 9 Sep 20172017-09-072017-09-09

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017
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Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-7
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 Record created 2017-09-20, last modified 2021-01-29
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