Home > Publications database > Random telegraph noise analysis in Redox-based Resistive Switching Devices Using KMC Simulations
 
Conference Presentation (Other) FZJ-2017-06659
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Random telegraph noise analysis in Redox-based Resistive Switching Devices Using KMC Simulations

 ;  ;

2017

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, KamakuraKamakura, Japan, 7 Sep 2017 - 9 Sep 20172017-09-072017-09-09

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017
Click to display QR Code for this record

The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2017-09-20, last modified 2021-01-29
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2508a
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English