Hauptseite > Publikationsdatenbank > Random telegraph noise analysis in Redox-based Resistive Switching Devices Using KMC Simulations > EndNote Text |
%0 Conference Paper %A Abbaspour, E. %A Menzel, Stephan %A Jungemann, C. %T Random telegraph noise analysis in Redox-based Resistive Switching Devices Using KMC Simulations %M FZJ-2017-06659 %D 2017 %B International Conference on Simulation of Semiconductor Processes and Devices %C 7 Sep 2017 - 9 Sep 2017, Kamakura (Japan) Y2 7 Sep 2017 - 9 Sep 2017 M2 Kamakura, Japan %F PUB:(DE-HGF)6 %9 Conference Presentation %U https://juser.fz-juelich.de/record/837888