Hauptseite > Publikationsdatenbank > Microstructure and electrical conductivity of (Y,Sr)CoO3-delta thin films tuned by the film-growth temperature > print |
001 | 837922 | ||
005 | 20210129231445.0 | ||
024 | 7 | _ | |2 doi |a 10.1016/j.jallcom.2017.04.192 |
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041 | _ | _ | |a English |
082 | _ | _ | |a 670 |
100 | 1 | _ | |0 P:(DE-HGF)0 |a Jing, Hong-Mei |b 0 |
245 | _ | _ | |a Microstructure and electrical conductivity of (Y,Sr)CoO3-delta thin films tuned by the film-growth temperature |
260 | _ | _ | |a Lausanne |b Elsevier |c 2017 |
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520 | _ | _ | |a Epitaxial films composed of (Y,Sr)CoO3-δ and nano-scale Y2O3 columns are successfully grown on (La0.289Sr0.712)(Al0.633Ta0.356)O3(001) substrates at 900 °C. The microstructural and electrical properties of the composite films are investigated and compared with those of the single-phase films prepared at 800 °C. In the composite films oxygen vacancies are detectable, which occur alternately in the stacking CoO2-δ planes of (Y,Sr)CoO3-δ. In addition, it is found that a large number of misfit dislocations distribute at the interfaces between the Y2O3 columns and the (Y,Sr)CoO3-δ film matrix. The measured resistivity of the composite films is significantly lower than that of the (Y,Sr)CoO3-δ single-phase films. Our results indicate that the electrical properties of the perovskite-based cobaltates films can be tuned by changing the microstructure through controlling the film-growth temperature. |
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700 | 1 | _ | |0 P:(DE-HGF)0 |a Hu, Guang-Liang |b 1 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Mi, Shao-Bo |b 2 |e Corresponding author |
700 | 1 | _ | |0 P:(DE-Juel1)161232 |a Lu, Lu |b 3 |
700 | 1 | _ | |0 P:(DE-Juel1)173033 |a Liu, Mingshan |b 4 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Cheng, Shao-Dong |b 5 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Cheng, Sheng |b 6 |
700 | 1 | _ | |0 P:(DE-Juel1)130736 |a Jia, Chun-Lin |b 7 |
773 | _ | _ | |0 PERI:(DE-600)2012675-X |a 10.1016/j.jallcom.2017.04.192 |p 181 - 185 |t Journal of alloys and compounds |v 714 |x 0925-8388 |y 2017 |
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