TY  - JOUR
AU  - Chen, X. Z.
AU  - Feng, J. F.
AU  - Wang, Z. C.
AU  - Zhang, J.
AU  - Zhong, X. Y.
AU  - Song, C.
AU  - Jin, L.
AU  - Zhang, B.
AU  - Li, F.
AU  - Jiang, M.
AU  - Tan, Y. Z.
AU  - Zhou, X. J.
AU  - Shi, G. Y.
AU  - Zhou, X. F.
AU  - Han, X. D.
AU  - Mao, S. C.
AU  - Chen, Y. H.
AU  - Han, X. F.
AU  - Pan, F.
TI  - Tunneling anisotropic magnetoresistance driven by magnetic phase transition
JO  - Nature Communications
VL  - 8
IS  - 1
SN  - 2041-1723
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2017-100017
SP  - 449
PY  - 2017
AB  - The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α′-FeRh-based junctions driven by the magnetic phase transition of α′-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α′-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α′-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.
LB  - PUB:(DE-HGF)16
C6  - pmid:28878205
UR  - <Go to ISI:>//WOS:000409458000003
DO  - DOI:10.1038/s41467-017-00290-4
UR  - https://juser.fz-juelich.de/record/838094
ER  -