Journal Article

FZJ-2017-100017

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Chen, X. Z. ; Feng, J. F. ; Wang, Z. C. ; Zhang, J.FZJ* ; Zhong, X. Y. ; Song, C. ; Jin, L.FZJ* ; Zhang, B. ; Li, F. ; Jiang, M. ; Tan, Y. Z. ; Zhou, X. J. ; Shi, G. Y. ; Zhou, X. F. ; Han, X. D. ; Mao, S. C. ; Chen, Y. H. ; Han, X. F. ; Pan, F. (Corresponding author)

2017
Nature Publishing Group London

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Please use a persistent id in citations: http://hdl.handle.net/2128/15425  doi:10.1038/s41467-017-00290-4

Abstract: The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α′-FeRh-based junctions driven by the magnetic phase transition of α′-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α′-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α′-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.

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Contributing Institute(s):

1. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2017

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