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@ARTICLE{Chen:838094,
      author       = {Chen, X. Z. and Feng, J. F. and Wang, Z. C. and Zhang, J.
                      and Zhong, X. Y. and Song, C. and Jin, L. and Zhang, B. and
                      Li, F. and Jiang, M. and Tan, Y. Z. and Zhou, X. J. and Shi,
                      G. Y. and Zhou, X. F. and Han, X. D. and Mao, S. C. and
                      Chen, Y. H. and Han, X. F. and Pan, F.},
      title        = {{T}unneling anisotropic magnetoresistance driven by
                      magnetic phase transition},
      journal      = {Nature Communications},
      volume       = {8},
      number       = {1},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2017-100017},
      pages        = {449},
      year         = {2017},
      abstract     = {The independent control of two magnetic electrodes and
                      spin-coherent transport in magnetic tunnel junctions are
                      strictly required for tunneling magnetoresistance, while
                      junctions with only one ferromagnetic electrode exhibit
                      tunneling anisotropic magnetoresistance dependent on the
                      anisotropic density of states with no room temperature
                      performance so far. Here, we report an alternative approach
                      to obtaining tunneling anisotropic magnetoresistance in
                      α′-FeRh-based junctions driven by the magnetic phase
                      transition of α′-FeRh and resultantly large variation of
                      the density of states in the vicinity of MgO tunneling
                      barrier, referred to as phase transition tunneling
                      anisotropic magnetoresistance. The junctions with only one
                      α′-FeRh magnetic electrode show a magnetoresistance ratio
                      up to $20\%$ at room temperature. Both the polarity and
                      magnitude of the phase transition tunneling anisotropic
                      magnetoresistance can be modulated by interfacial
                      engineering at the α′-FeRh/MgO interface. Besides the
                      fundamental significance, our finding might add a different
                      dimension to magnetic random access memory and
                      antiferromagnet spintronics.},
      cin          = {ER-C-1},
      ddc          = {500},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:28878205},
      UT           = {WOS:000409458000003},
      doi          = {10.1038/s41467-017-00290-4},
      url          = {https://juser.fz-juelich.de/record/838094},
}