%0 Journal Article
%A Borghardt, Sven
%A Tu, Jhih-Sian
%A Winkler, Florian
%A Schubert, Jürgen
%A Zander, Willi
%A Leosson, Kristjan
%A Kardynal, Beata
%T Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening
%J Physical review materials
%V 1
%N 5
%@ 2475-9953
%C College Park, MD
%I APS
%M FZJ-2017-07009
%P 054001
%D 2017
%X Heterojunctions are the backbone of established semiconductor technology. The highly desirable reliablecreation of dielectrically defined heterojunctions in transition metal dichalcogenide monolayers (TMD-MLs)requires an in-depth understanding of dielectric screening effects induced by the ML’s environment. Here wereport on the modulations of excitonic transitions in TMD-MLs through the effect of dielectric environmentsincluding low-k and high-k dielectric materials. We present absolute tuning ranges as large as 37 meV for theoptical band gaps of WSe2 andMoSe2 MLs and relative tuning ranges on the order of 15% for the binding energiesof charged excitons. Additionally, wemeasure relative changes of 30% in the energy splittings of exciton Rydbergstates of WSe2. The findings enable us to estimate changes in the exciton binding energies and the electronicband gaps of the studied materials.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000416584100001
%R 10.1103/PhysRevMaterials.1.054001
%U https://juser.fz-juelich.de/record/838397