Journal Article

FZJ-2017-07009

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening

Borghardt, S. (Corresponding author)FZJ* ; Tu, J.-S.FZJ* ; Winkler, F.FZJ* ; Schubert, J.FZJ* ; Zander, W.FZJ* ; Leosson, K. ; Kardynal, B.FZJ*

2017
APS College Park, MD

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Please use a persistent id in citations: http://hdl.handle.net/2128/15716  doi:10.1103/PhysRevMaterials.1.054001

Abstract: Heterojunctions are the backbone of established semiconductor technology. The highly desirable reliablecreation of dielectrically defined heterojunctions in transition metal dichalcogenide monolayers (TMD-MLs)requires an in-depth understanding of dielectric screening effects induced by the ML’s environment. Here wereport on the modulations of excitonic transitions in TMD-MLs through the effect of dielectric environmentsincluding low-k and high-k dielectric materials. We present absolute tuning ranges as large as 37 meV for theoptical band gaps of WSe2 andMoSe2 MLs and relative tuning ranges on the order of 15% for the binding energiesof charged excitons. Additionally, wemeasure relative changes of 30% in the energy splittings of exciton Rydbergstates of WSe2. The findings enable us to estimate changes in the exciton binding energies and the electronicband gaps of the studied materials.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Physik Nanoskaliger Systeme (ER-C-1)
4. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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