TY  - JOUR
AU  - Borghardt, Sven
AU  - Tu, Jhih-Sian
AU  - Winkler, Florian
AU  - Schubert, Jürgen
AU  - Zander, Willi
AU  - Leosson, Kristjan
AU  - Kardynal, Beata
TI  - Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening
JO  - Physical review materials
VL  - 1
IS  - 5
SN  - 2475-9953
CY  - College Park, MD
PB  - APS
M1  - FZJ-2017-07009
SP  - 054001
PY  - 2017
AB  - Heterojunctions are the backbone of established semiconductor technology. The highly desirable reliablecreation of dielectrically defined heterojunctions in transition metal dichalcogenide monolayers (TMD-MLs)requires an in-depth understanding of dielectric screening effects induced by the ML’s environment. Here wereport on the modulations of excitonic transitions in TMD-MLs through the effect of dielectric environmentsincluding low-k and high-k dielectric materials. We present absolute tuning ranges as large as 37 meV for theoptical band gaps of WSe2 andMoSe2 MLs and relative tuning ranges on the order of 15% for the binding energiesof charged excitons. Additionally, wemeasure relative changes of 30% in the energy splittings of exciton Rydbergstates of WSe2. The findings enable us to estimate changes in the exciton binding energies and the electronicband gaps of the studied materials.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000416584100001
DO  - DOI:10.1103/PhysRevMaterials.1.054001
UR  - https://juser.fz-juelich.de/record/838397
ER  -