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@ARTICLE{Borghardt:838397,
      author       = {Borghardt, Sven and Tu, Jhih-Sian and Winkler, Florian and
                      Schubert, Jürgen and Zander, Willi and Leosson, Kristjan
                      and Kardynal, Beata},
      title        = {{E}ngineering of optical and electronic band gaps in
                      transition metal dichalcogenide monolayers through external
                      dielectric screening},
      journal      = {Physical review materials},
      volume       = {1},
      number       = {5},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2017-07009},
      pages        = {054001},
      year         = {2017},
      abstract     = {Heterojunctions are the backbone of established
                      semiconductor technology. The highly desirable
                      reliablecreation of dielectrically defined heterojunctions
                      in transition metal dichalcogenide monolayers
                      (TMD-MLs)requires an in-depth understanding of dielectric
                      screening effects induced by the ML’s environment. Here
                      wereport on the modulations of excitonic transitions in
                      TMD-MLs through the effect of dielectric
                      environmentsincluding low-k and high-k dielectric materials.
                      We present absolute tuning ranges as large as 37 meV for
                      theoptical band gaps of WSe2 andMoSe2 MLs and relative
                      tuning ranges on the order of $15\%$ for the binding
                      energiesof charged excitons. Additionally, wemeasure
                      relative changes of $30\%$ in the energy splittings of
                      exciton Rydbergstates of WSe2. The findings enable us to
                      estimate changes in the exciton binding energies and the
                      electronicband gaps of the studied materials.},
      cin          = {PGI-9 / JARA-FIT / ER-C-1 / PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000416584100001},
      doi          = {10.1103/PhysRevMaterials.1.054001},
      url          = {https://juser.fz-juelich.de/record/838397},
}