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| Hauptseite > Publikationsdatenbank > Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening > print |
| Hauptseite > Publikationsdatenbank > Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening > print |
| 001 | 838397 | ||
| 005 | 20240610120816.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevMaterials.1.054001 |2 doi |
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| 037 | _ | _ | |a FZJ-2017-07009 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Borghardt, Sven |0 P:(DE-Juel1)164287 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening |
| 260 | _ | _ | |a College Park, MD |c 2017 |b APS |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Heterojunctions are the backbone of established semiconductor technology. The highly desirable reliablecreation of dielectrically defined heterojunctions in transition metal dichalcogenide monolayers (TMD-MLs)requires an in-depth understanding of dielectric screening effects induced by the ML’s environment. Here wereport on the modulations of excitonic transitions in TMD-MLs through the effect of dielectric environmentsincluding low-k and high-k dielectric materials. We present absolute tuning ranges as large as 37 meV for theoptical band gaps of WSe2 andMoSe2 MLs and relative tuning ranges on the order of 15% for the binding energiesof charged excitons. Additionally, wemeasure relative changes of 30% in the energy splittings of exciton Rydbergstates of WSe2. The findings enable us to estimate changes in the exciton binding energies and the electronicband gaps of the studied materials. |
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| 700 | 1 | _ | |a Kardynal, Beata |0 P:(DE-Juel1)145316 |b 6 |
| 773 | _ | _ | |a 10.1103/PhysRevMaterials.1.054001 |g Vol. 1, no. 5, p. 054001 |0 PERI:(DE-600)2898355-5 |n 5 |p 054001 |t Physical review materials |v 1 |y 2017 |x 2475-9953 |
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