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@PHDTHESIS{Zimmermann:838894,
author = {Zimmermann, Thomas},
title = {{H}igh-rate growth of hydrogenated amorphous and
microcrystalline silicon for thin-film silicon solar cells
using dynamic very-high frequency plasma-enhanced chemical
vapor deposition},
volume = {183},
school = {Universität Dresden},
type = {Dissertation},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2017-07400},
isbn = {978-3-89336-892-1},
series = {Schriften des Forschungszentrums Jülich / Reihe Energie
$\&$ Umwelt},
pages = {126 S : graph. Darst},
year = {2013},
note = {Dissertation, Universität Dresden, 2013},
abstract = {Thin-film silicon tandem solar cells based on a
hydrogenated amorphous silicon (a-Si:H) top-cell and a
hydrogenated microcrystalline silicon (μc-Si:H) bottom-cell
are a promising photovoltaic technology as they use a
combination of absorber materials that is ideally suited for
the solar spectrum. Additionally, the involved materials are
abundant and non-toxic which is important for the
manufacturing and application on a large scale. One of the
most important factors for the application of photovoltaic
technologies is the cost per watt. There are several ways to
reduce this figure: increasing the efficiency of the solar
cells, reducing the material consumption and increasing the
throughput of the manufacturing equipment. The use of
very-high frequencies has been proven to be beneficial for
the material quality at high deposition rates thus enabling
a high throughput and high solar cell efficiencies. In the
present work a scalable very-high frequency plasma-enhanced
chemical vapor deposition (VHF-PECVD) technique for
state-of-the-art solar cells is developed. Linear plasma
sources are applied which facilitate the use of very-high
frequencies on large areas without compromising on the
homogeneity of the deposition process. The linear plasma
sources require a dynamic deposition process with the
substrate passing by the electrodes in order to achieve a
homogeneous deposition on large areas. State-of-the-art
static radio-frequency (RF) PECVD processes are used as a
referencein order to assess the potential of a dynamic
VHF-PECVD technique for the growth of high-quality a-Si:H
and $\mu$c-Si:H absorber layers at high rates. In chapter 4
the influence of the deposition process of the $\mu$c-Si:H
i-layer on the solar cell performance is studied for static
deposition processes. It is shown that the
correlationbetween the i-layer growth rate, its
crystallinity and the solar cell performance is similar for
VHF- and RF-PECVD processes despite the different electrode
configurations, excitation frequencies and process regimes.
It is found that solar cells incorporating i-layers grown
statically using VHF-PECVD processes obtain a
state-of-the-art efficiency close to 8 \% for growth rates
up to 1.4 nm/s compared to 0.53 nm/s for RF-PECVD processes.
[...]},
keywords = {Solarzelle (gnd) / Mikrokristall (gnd) / Silicone (gnd)},
cin = {IEK-5},
ddc = {500},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {899 - ohne Topic (POF3-899)},
pid = {G:(DE-HGF)POF3-899},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
url = {https://juser.fz-juelich.de/record/838894},
}