000841545 001__ 841545
000841545 005__ 20240619091234.0
000841545 0247_ $$2doi$$a10.1002/smll.201702516
000841545 0247_ $$2ISSN$$a1613-6810
000841545 0247_ $$2ISSN$$a1613-6829
000841545 0247_ $$2WOS$$aWOS:000419818800005
000841545 037__ $$aFZJ-2017-08589
000841545 041__ $$aEnglish
000841545 082__ $$a540
000841545 1001_ $$0P:(DE-Juel1)164241$$aZadorozhnyi, Ihor$$b0$$ufzj
000841545 245__ $$aEffect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel
000841545 260__ $$aWeinheim$$bWiley-VCH$$c2018
000841545 3367_ $$2DRIVER$$aarticle
000841545 3367_ $$2DataCite$$aOutput Types/Journal article
000841545 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1516106640_14955
000841545 3367_ $$2BibTeX$$aARTICLE
000841545 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000841545 3367_ $$00$$2EndNote$$aJournal Article
000841545 520__ $$aIn the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.
000841545 536__ $$0G:(DE-HGF)POF3-523$$a523 - Controlling Configuration-Based Phenomena (POF3-523)$$cPOF3-523$$fPOF III$$x0
000841545 588__ $$aDataset connected to CrossRef
000841545 7001_ $$0P:(DE-Juel1)138685$$aLi, Jing$$b1
000841545 7001_ $$0P:(DE-Juel1)138431$$aPud, Sergii$$b2
000841545 7001_ $$0P:(DE-Juel1)164250$$aHlukhova, Hanna$$b3$$ufzj
000841545 7001_ $$0P:(DE-Juel1)164242$$aHandziuk, Volodymyr$$b4$$ufzj
000841545 7001_ $$0P:(DE-Juel1)167225$$aKutovyi, Yurii$$b5$$ufzj
000841545 7001_ $$0P:(DE-HGF)0$$aPetrychuk, Mykhailo$$b6
000841545 7001_ $$0P:(DE-Juel1)128738$$aVitusevich, Svetlana$$b7$$eCorresponding author
000841545 773__ $$0PERI:(DE-600)2168935-0$$a10.1002/smll.201702516$$gp. 1702516 -$$n2$$p1702516 $$tSmall$$v14$$x1613-6810$$y2018
000841545 8564_ $$uhttps://juser.fz-juelich.de/record/841545/files/Zadorozhnyi_et_al-2018-Small.pdf$$yRestricted
000841545 8564_ $$uhttps://juser.fz-juelich.de/record/841545/files/Zadorozhnyi_et_al-2018-Small.gif?subformat=icon$$xicon$$yRestricted
000841545 8564_ $$uhttps://juser.fz-juelich.de/record/841545/files/Zadorozhnyi_et_al-2018-Small.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000841545 8564_ $$uhttps://juser.fz-juelich.de/record/841545/files/Zadorozhnyi_et_al-2018-Small.jpg?subformat=icon-180$$xicon-180$$yRestricted
000841545 8564_ $$uhttps://juser.fz-juelich.de/record/841545/files/Zadorozhnyi_et_al-2018-Small.jpg?subformat=icon-640$$xicon-640$$yRestricted
000841545 8564_ $$uhttps://juser.fz-juelich.de/record/841545/files/Zadorozhnyi_et_al-2018-Small.pdf?subformat=pdfa$$xpdfa$$yRestricted
000841545 909CO $$ooai:juser.fz-juelich.de:841545$$pVDB
000841545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)164241$$aForschungszentrum Jülich$$b0$$kFZJ
000841545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)164250$$aForschungszentrum Jülich$$b3$$kFZJ
000841545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)164242$$aForschungszentrum Jülich$$b4$$kFZJ
000841545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)167225$$aForschungszentrum Jülich$$b5$$kFZJ
000841545 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128738$$aForschungszentrum Jülich$$b7$$kFZJ
000841545 9131_ $$0G:(DE-HGF)POF3-523$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000841545 9141_ $$y2018
000841545 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000841545 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000841545 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000841545 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSMALL : 2015
000841545 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000841545 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000841545 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000841545 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000841545 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000841545 915__ $$0StatID:(DE-HGF)9905$$2StatID$$aIF >= 5$$bSMALL : 2015
000841545 920__ $$lyes
000841545 9201_ $$0I:(DE-Juel1)ICS-8-20110106$$kICS-8$$lBioelektronik$$x0
000841545 980__ $$ajournal
000841545 980__ $$aVDB
000841545 980__ $$aI:(DE-Juel1)ICS-8-20110106
000841545 980__ $$aUNRESTRICTED
000841545 981__ $$aI:(DE-Juel1)IBI-3-20200312