Journal Article

FZJ-2017-08589

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Zadorozhnyi, I.FZJ* ; Li, J. ; Pud, S. ; Hlukhova, H.FZJ* ; Handziuk, V.FZJ* ; Kutovyi, Y.FZJ* ; Petrychuk, M. ; Vitusevich, S. (Corresponding author)FZJ*

2018
Wiley-VCH Weinheim

This record in other databases:  

Please use a persistent id in citations: doi:10.1002/smll.201702516

Abstract: In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.

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Contributing Institute(s):

1. Bioelektronik (ICS-8)

Research Program(s):

1. 523 - Controlling Configuration-Based Phenomena (POF3-523) (POF3-523)

Appears in the scientific report 2018

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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