TY  - JOUR
AU  - Zadorozhnyi, Ihor
AU  - Li, Jing
AU  - Pud, Sergii
AU  - Hlukhova, Hanna
AU  - Handziuk, Volodymyr
AU  - Kutovyi, Yurii
AU  - Petrychuk, Mykhailo
AU  - Vitusevich, Svetlana
TI  - Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel
JO  - Small
VL  - 14
IS  - 2
SN  - 1613-6810
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2017-08589
SP  - 1702516 
PY  - 2018
AB  - In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000419818800005
DO  - DOI:10.1002/smll.201702516
UR  - https://juser.fz-juelich.de/record/841545
ER  -