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@ARTICLE{Zadorozhnyi:841545,
author = {Zadorozhnyi, Ihor and Li, Jing and Pud, Sergii and
Hlukhova, Hanna and Handziuk, Volodymyr and Kutovyi, Yurii
and Petrychuk, Mykhailo and Vitusevich, Svetlana},
title = {{E}ffect of {G}amma {I}rradiation on {D}ynamics of {C}harge
{E}xchange {P}rocesses between {S}ingle {T}rap and
{N}anowire {C}hannel},
journal = {Small},
volume = {14},
number = {2},
issn = {1613-6810},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2017-08589},
pages = {1702516},
year = {2018},
abstract = {In the present study, transport properties and single trap
phenomena in silicon nanowire (NW) field-effect transistors
(FETs) are reported. The dynamic behavior of drain current
in NW FETs studied before and after gamma radiation
treatment deviates from the predictions of the
Shockley–Read–Hall model and is explained by the concept
taking into account an additional energy barrier in the
accumulation regime. It is revealed that dynamics of charge
exchange processes between single trap and nanowire channel
strongly depend on gamma radiation treatment. The results
represent potential for utilizing single trap phenomena in a
number of advanced devices.},
cin = {ICS-8},
ddc = {540},
cid = {I:(DE-Juel1)ICS-8-20110106},
pnm = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
pid = {G:(DE-HGF)POF3-523},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000419818800005},
doi = {10.1002/smll.201702516},
url = {https://juser.fz-juelich.de/record/841545},
}