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@ARTICLE{Schnedler:848150,
      author       = {Schnedler, M. and Portz, V. and Semmler, U. and Moors, M.
                      and Waser, R. and Dunin-Borkowski, R. E. and Ebert, Ph.},
      title        = {{R}esistive switching in optoelectronic {III}-{V} materials
                      based on deep traps},
      journal      = {Scientific reports},
      volume       = {8},
      number       = {1},
      issn         = {2045-2322},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2018-03422},
      pages        = {9483},
      year         = {2018},
      abstract     = {Resistive switching random access memories (ReRAM) are
                      promising candidates for energy efficient, fast, and
                      non-volatile universal memories that unite the advantages of
                      RAM and hard drives. Unfortunately, the current ReRAM
                      materials are incompatible with optical interconnects and
                      wires. Optical signal transmission is, however, inevitable
                      for next generation memories in order to overcome the
                      capacity-bandwidth trade-off. Thus, we present here a
                      proof-of-concept of a new type of resistive switching
                      realized in III-V semiconductors, which meet all
                      requirements for the implementation of optoelectronic
                      circuits. This resistive switching effect is based on
                      controlling the spatial positions of vacancy-induced deep
                      traps by stimulated migration, opening and closing a
                      conduction channel through a semi-insulating compensated
                      surface layer. The mechanism is widely applicable to
                      opto-electronically usable III-V compound semiconductors.},
      cin          = {PGI-5 / PGI-7 / ER-C-1},
      ddc          = {000},
      cid          = {I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)PGI-7-20110106 /
                      I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29930354},
      UT           = {WOS:000435790500062},
      doi          = {10.1038/s41598-018-27835-x},
      url          = {https://juser.fz-juelich.de/record/848150},
}