Journal Article

FZJ-2018-03422

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Resistive switching in optoelectronic III-V materials based on deep traps

Schnedler, M. (Corresponding author)FZJ* ; Portz, V.FZJ* ; Semmler, U.FZJ* ; Moors, M.FZJ* ; Waser, R.FZJ* ; Dunin-Borkowski, R. E.FZJ* ; Ebert, P. (Corresponding author)FZJ*

2018
Nature Publishing Group London

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Please use a persistent id in citations: http://hdl.handle.net/2128/19058  doi:10.1038/s41598-018-27835-x

Abstract: Resistive switching random access memories (ReRAM) are promising candidates for energy efficient, fast, and non-volatile universal memories that unite the advantages of RAM and hard drives. Unfortunately, the current ReRAM materials are incompatible with optical interconnects and wires. Optical signal transmission is, however, inevitable for next generation memories in order to overcome the capacity-bandwidth trade-off. Thus, we present here a proof-of-concept of a new type of resistive switching realized in III-V semiconductors, which meet all requirements for the implementation of optoelectronic circuits. This resistive switching effect is based on controlling the spatial positions of vacancy-induced deep traps by stimulated migration, opening and closing a conduction channel through a semi-insulating compensated surface layer. The mechanism is widely applicable to opto-electronically usable III-V compound semiconductors.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)
2. Elektronische Materialien (PGI-7)
3. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2018

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