TY  - JOUR
AU  - Heisig, Thomas
AU  - Baeumer, Christoph
AU  - Gries, Ute N.
AU  - Mueller, Michael P.
AU  - La Torre, Camilla
AU  - Luebben, Michael
AU  - Raab, Nicolas
AU  - Du, Hongchu
AU  - Menzel, Stephan
AU  - Mueller, David N.
AU  - Jia, Chun-Lin
AU  - Mayer, Joachim
AU  - Waser, R.
AU  - Valov, Ilia
AU  - De Souza, Roger A.
AU  - Dittmann, Regina
TI  - Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
JO  - Advanced materials
VL  - 30
IS  - 29
SN  - 0935-9648
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2018-03438
SP  - 1800957 -
PY  - 2018
AB  - Resistive switching based on transition metal oxide memristive devices is suspected to be caused by the electric‐field‐driven motion and internal redistribution of oxygen vacancies. Deriving the detailed mechanistic picture of the switching process is complicated, however, by the frequently observed influence of the surrounding atmosphere. Specifically, the presence or absence of water vapor in the atmosphere has a strong impact on the switching properties, but the redox reactions between water and the active layer have yet to be clarified. To investigate the role of oxygen and water species during resistive switching in greater detail, isotope labeling experiments in a N2/H218O tracer gas atmosphere combined with time‐of‐flight secondary‐ion mass spectrometry are used. It is explicitly demonstrated that during the RESET operation in resistive switching SrTiO3‐based memristive devices, oxygen is incorporated directly from water molecules or oxygen molecules into the active layer. In humid atmospheres, the reaction pathway via water molecules predominates. These findings clearly resolve the role of humidity as both oxidizing agent and source of protonic defects during the RESET operation. 
LB  - PUB:(DE-HGF)16
C6  - pmid:29882270
UR  - <Go to ISI:>//WOS:000438709400015
DO  - DOI:10.1002/adma.201800957
UR  - https://juser.fz-juelich.de/record/848172
ER  -