Journal Article

FZJ-2018-03438

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

Heisig, T. (Corresponding author)FZJ* ; Baeumer, C.FZJ* ; Gries, U. N. ; Mueller, M. P. ; La Torre, C. ; Luebben, M. ; Raab, N. ; Du, H.FZJ* ; Menzel, S.FZJ* ; Mueller, D. N. ; Jia, C.-L.FZJ* ; Mayer, J.FZJ* ; Waser, R.FZJ* ; Valov, I.FZJ* ; De Souza, R. A. ; Dittmann, R.FZJ*

2018
Wiley-VCH Weinheim

This record in other databases:      

Please use a persistent id in citations: doi:10.1002/adma.201800957

Abstract: Resistive switching based on transition metal oxide memristive devices is suspected to be caused by the electric‐field‐driven motion and internal redistribution of oxygen vacancies. Deriving the detailed mechanistic picture of the switching process is complicated, however, by the frequently observed influence of the surrounding atmosphere. Specifically, the presence or absence of water vapor in the atmosphere has a strong impact on the switching properties, but the redox reactions between water and the active layer have yet to be clarified. To investigate the role of oxygen and water species during resistive switching in greater detail, isotope labeling experiments in a N2/H218O tracer gas atmosphere combined with time‐of‐flight secondary‐ion mass spectrometry are used. It is explicitly demonstrated that during the RESET operation in resistive switching SrTiO3‐based memristive devices, oxygen is incorporated directly from water molecules or oxygen molecules into the active layer. In humid atmospheres, the reaction pathway via water molecules predominates. These findings clearly resolve the role of humidity as both oxidizing agent and source of protonic defects during the RESET operation.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. Materialwissenschaft u. Werkstofftechnik (ER-C-2)
3. Physik Nanoskaliger Systeme (ER-C-1)
4. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 15 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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