% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Heisig:848172,
      author       = {Heisig, Thomas and Baeumer, Christoph and Gries, Ute N. and
                      Mueller, Michael P. and La Torre, Camilla and Luebben,
                      Michael and Raab, Nicolas and Du, Hongchu and Menzel,
                      Stephan and Mueller, David N. and Jia, Chun-Lin and Mayer,
                      Joachim and Waser, R. and Valov, Ilia and De Souza, Roger A.
                      and Dittmann, Regina},
      title        = {{O}xygen {E}xchange {P}rocesses between {O}xide
                      {M}emristive {D}evices and {W}ater {M}olecules},
      journal      = {Advanced materials},
      volume       = {30},
      number       = {29},
      issn         = {0935-9648},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2018-03438},
      pages        = {1800957 -},
      year         = {2018},
      abstract     = {Resistive switching based on transition metal oxide
                      memristive devices is suspected to be caused by the
                      electric‐field‐driven motion and internal redistribution
                      of oxygen vacancies. Deriving the detailed mechanistic
                      picture of the switching process is complicated, however, by
                      the frequently observed influence of the surrounding
                      atmosphere. Specifically, the presence or absence of water
                      vapor in the atmosphere has a strong impact on the switching
                      properties, but the redox reactions between water and the
                      active layer have yet to be clarified. To investigate the
                      role of oxygen and water species during resistive switching
                      in greater detail, isotope labeling experiments in a
                      N2/H218O tracer gas atmosphere combined with
                      time‐of‐flight secondary‐ion mass spectrometry are
                      used. It is explicitly demonstrated that during the RESET
                      operation in resistive switching SrTiO3‐based memristive
                      devices, oxygen is incorporated directly from water
                      molecules or oxygen molecules into the active layer. In
                      humid atmospheres, the reaction pathway via water molecules
                      predominates. These findings clearly resolve the role of
                      humidity as both oxidizing agent and source of protonic
                      defects during the RESET operation.},
      cin          = {PGI-7 / ER-C-2 / ER-C-1 / PGI-6},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)ER-C-2-20170209 /
                      I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)PGI-6-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29882270},
      UT           = {WOS:000438709400015},
      doi          = {10.1002/adma.201800957},
      url          = {https://juser.fz-juelich.de/record/848172},
}