Journal Article

FZJ-2018-03451

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope

Nägelein, A. (Corresponding author) ; Steidl, M. ; Korte, S.FZJ* ; Voigtländer, B.FZJ* ; Prost, W. ; Kleinschmidt, P. ; Hannappel, T.

2018
Tsinghua Press [S.l.]

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Please use a persistent id in citations: doi:10.1007/s12274-018-2105-x

Abstract: Profiling of the electrical properties of nanowires (NWs) and NW heterocontacts with high spatial resolution is a challenge for any application and advancedNW device development. For appropriate NW analysis, we have established afour-point prober, which is combined in vacuo with a state-of-the-art vaporliquid-solid preparation, enabling contamination-free NW characterization withhigh spatial resolution. With this ultrahigh-vacuum-based multi-tip scanningtunneling microscopy (MT-STM), we obtained the resistance and dopingprofiles of freestanding NWs, along with surface-sensitive information. Ourin-system 4-probe STM approach decreased the detection limit for low dopantconcentrations to the depleted case in upright standing NWs, while increasingthe spatial resolution and considering radial depletion regions, which mayoriginate from surface changes. Accordingly, the surface potential of oxide-freeGaAs NW {112} facets has been estimated to be lower than 20 mV, indicating aNW surface with very low surface state density.

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Contributing Institute(s):

1. Funktionale Nanostrukturen an Oberflächen (PGI-3)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2018

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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