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000848185 1001_ $$0P:(DE-HGF)0$$aNägelein, Andreas$$b0$$eCorresponding author
000848185 245__ $$aInvestigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope
000848185 260__ $$a[S.l.]$$bTsinghua Press$$c2018
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000848185 520__ $$aProfiling of the electrical properties of nanowires (NWs) and NW heterocontacts with high spatial resolution is a challenge for any application and advancedNW device development. For appropriate NW analysis, we have established afour-point prober, which is combined in vacuo with a state-of-the-art vaporliquid-solid preparation, enabling contamination-free NW characterization withhigh spatial resolution. With this ultrahigh-vacuum-based multi-tip scanningtunneling microscopy (MT-STM), we obtained the resistance and dopingprofiles of freestanding NWs, along with surface-sensitive information. Ourin-system 4-probe STM approach decreased the detection limit for low dopantconcentrations to the depleted case in upright standing NWs, while increasingthe spatial resolution and considering radial depletion regions, which mayoriginate from surface changes. Accordingly, the surface potential of oxide-freeGaAs NW {112} facets has been estimated to be lower than 20 mV, indicating aNW surface with very low surface state density.
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000848185 7001_ $$0P:(DE-HGF)0$$aSteidl, Matthias$$b1
000848185 7001_ $$0P:(DE-Juel1)138943$$aKorte, Stefan$$b2
000848185 7001_ $$0P:(DE-Juel1)128794$$aVoigtländer, Bert$$b3
000848185 7001_ $$0P:(DE-HGF)0$$aProst, Werner$$b4
000848185 7001_ $$0P:(DE-HGF)0$$aKleinschmidt, Peter$$b5
000848185 7001_ $$0P:(DE-HGF)0$$aHannappel, Thomas$$b6
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