TY  - JOUR
AU  - Nägelein, Andreas
AU  - Steidl, Matthias
AU  - Korte, Stefan
AU  - Voigtländer, Bert
AU  - Prost, Werner
AU  - Kleinschmidt, Peter
AU  - Hannappel, Thomas
TI  - Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope
JO  - Nano research
VL  - 11
IS  - 11
SN  - 1998-0000
CY  - [S.l.]
PB  - Tsinghua Press
M1  - FZJ-2018-03451
SP  - 5924-5934
PY  - 2018
AB  - Profiling of the electrical properties of nanowires (NWs) and NW heterocontacts with high spatial resolution is a challenge for any application and advancedNW device development. For appropriate NW analysis, we have established afour-point prober, which is combined in vacuo with a state-of-the-art vaporliquid-solid preparation, enabling contamination-free NW characterization withhigh spatial resolution. With this ultrahigh-vacuum-based multi-tip scanningtunneling microscopy (MT-STM), we obtained the resistance and dopingprofiles of freestanding NWs, along with surface-sensitive information. Ourin-system 4-probe STM approach decreased the detection limit for low dopantconcentrations to the depleted case in upright standing NWs, while increasingthe spatial resolution and considering radial depletion regions, which mayoriginate from surface changes. Accordingly, the surface potential of oxide-freeGaAs NW {112} facets has been estimated to be lower than 20 mV, indicating aNW surface with very low surface state density.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000449842500014
DO  - DOI:10.1007/s12274-018-2105-x
UR  - https://juser.fz-juelich.de/record/848185
ER  -