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@ARTICLE{Ngelein:848185,
      author       = {Nägelein, Andreas and Steidl, Matthias and Korte, Stefan
                      and Voigtländer, Bert and Prost, Werner and Kleinschmidt,
                      Peter and Hannappel, Thomas},
      title        = {{I}nvestigation of charge carrier depletion in freestanding
                      nanowires by a multi-probe scanning tunneling microscope},
      journal      = {Nano research},
      volume       = {11},
      number       = {11},
      issn         = {1998-0000},
      address      = {[S.l.]},
      publisher    = {Tsinghua Press},
      reportid     = {FZJ-2018-03451},
      pages        = {5924-5934},
      year         = {2018},
      abstract     = {Profiling of the electrical properties of nanowires (NWs)
                      and NW heterocontacts with high spatial resolution is a
                      challenge for any application and advancedNW device
                      development. For appropriate NW analysis, we have
                      established afour-point prober, which is combined in vacuo
                      with a state-of-the-art vaporliquid-solid preparation,
                      enabling contamination-free NW characterization withhigh
                      spatial resolution. With this ultrahigh-vacuum-based
                      multi-tip scanningtunneling microscopy (MT-STM), we obtained
                      the resistance and dopingprofiles of freestanding NWs, along
                      with surface-sensitive information. Ourin-system 4-probe STM
                      approach decreased the detection limit for low
                      dopantconcentrations to the depleted case in upright
                      standing NWs, while increasingthe spatial resolution and
                      considering radial depletion regions, which mayoriginate
                      from surface changes. Accordingly, the surface potential of
                      oxide-freeGaAs NW {112} facets has been estimated to be
                      lower than 20 mV, indicating aNW surface with very low
                      surface state density.},
      cin          = {PGI-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000449842500014},
      doi          = {10.1007/s12274-018-2105-x},
      url          = {https://juser.fz-juelich.de/record/848185},
}