Journal Article

FZJ-2018-03734

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Huang, B.-C. ; Yu, P. (Corresponding author) ; Chu, Y. H. ; Chang, C.-S. ; Ramesh, R. ; Dunin-Borkowski, R.FZJ* ; Ebert, P.FZJ* ; Chiu, Y.-P.

2018
Soc. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acsnano.7b06004

Abstract: We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)
2. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2018

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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