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@ARTICLE{Stange:849678,
      author       = {Stange, D. and Wirths, S. and von den Driesch, N. and
                      Mussler, G. and Stoica, T. and Ikonic, Z. and Hartmann, J.
                      M. and Mantl, S. and Grützmacher, D. and Buca, Dan Mihai},
      title        = {{O}ptical {T}ransitions in {D}irect-{B}andgap {G}e 1– x
                      {S}n x {A}lloys},
      journal      = {ACS photonics},
      volume       = {2},
      number       = {11},
      issn         = {2330-4022},
      address      = {Washington, DC},
      publisher    = {ACS},
      reportid     = {FZJ-2018-03814},
      pages        = {1539 - 1545},
      year         = {2015},
      abstract     = {A comprehensive study of optical transitions in
                      direct-bandgap Ge0.875Sn0.125 group IV alloys via
                      photoluminescence measurements as a function of temperature,
                      compressive strain and excitation power is performed. The
                      analysis of the integrated emission intensities reveals a
                      strain-dependent indirect-to-direct bandgap transition, in
                      good agreement with band structure calculations based on the
                      8-band k·p and deformation potential methods. We have
                      observed and quantified Γ valley–heavy hole and Γ
                      valley–light hole transitions at low pumping power and low
                      temperatures in order to verify the splitting of the valence
                      band due to strain. We will demonstrate that the intensity
                      evolution of these transitions supports the conclusion about
                      the fundamental direct bandgap in compressively strained
                      GeSn alloys. The presented investigation, thus, demonstrates
                      that direct-bandgap group IV alloys can be directly grown on
                      Ge-buffered Si(001) substrates despite their residual
                      compressive strain.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000365148400005},
      doi          = {10.1021/acsphotonics.5b00372},
      url          = {https://juser.fz-juelich.de/record/849678},
}