Journal Article

FZJ-2018-03814

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Optical Transitions in Direct-Bandgap Ge 1– x Sn x Alloys

Stange, D.FZJ* ; Wirths, S.FZJ* ; von den Driesch, N.FZJ* ; Mussler, G.FZJ* ; Stoica, T. ; Ikonic, Z. ; Hartmann, J. M. ; Mantl, S.FZJ* ; Grützmacher, D. (Corresponding author)FZJ* ; Buca, D. M. (Corresponding author)FZJ*

2015
ACS Washington, DC

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Please use a persistent id in citations: doi:10.1021/acsphotonics.5b00372

Abstract: A comprehensive study of optical transitions in direct-bandgap Ge0.875Sn0.125 group IV alloys via photoluminescence measurements as a function of temperature, compressive strain and excitation power is performed. The analysis of the integrated emission intensities reveals a strain-dependent indirect-to-direct bandgap transition, in good agreement with band structure calculations based on the 8-band k·p and deformation potential methods. We have observed and quantified Γ valley–heavy hole and Γ valley–light hole transitions at low pumping power and low temperatures in order to verify the splitting of the valence band due to strain. We will demonstrate that the intensity evolution of these transitions supports the conclusion about the fundamental direct bandgap in compressively strained GeSn alloys. The presented investigation, thus, demonstrates that direct-bandgap group IV alloys can be directly grown on Ge-buffered Si(001) substrates despite their residual compressive strain.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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