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@INPROCEEDINGS{Stange:849679,
      author       = {Stange, D. and von den Driesch, N. and Rainko, D. and
                      Zabel, T. and Marzban, B. and Ikonic, Z. and Zaumseil, P.
                      and Capellini, G. and Manti, S. and Witzens, J. and Sigg, H.
                      and Grutzmacher, D. and Buca, D.},
      title        = {{Q}uantum confinement effects in {G}e{S}n/{S}i{G}e{S}n
                      heterostructure lasers},
      publisher    = {IEEE},
      reportid     = {FZJ-2018-03815},
      pages        = {24.2.1-24.2.4},
      year         = {2017},
      abstract     = {The development of a light source on Si, which can be
                      integrated in photonic circuits together with CMOS
                      electronics, is an outstanding goal in the field of Silicon
                      photonics. This could e.g. help to overcome bandwidth
                      limitations and losses of copper interconnects as the number
                      of high-speed transistors on a chip increases. Here, we
                      discuss direct bandgap group IV materials, GeSn/SiGeSn
                      heterostructures and resulting quantum confinement effects
                      for laser implementation. After material characterization,
                      optical properties, including lasing, are probed via
                      photoluminescence spectrometry. The quantum confinement
                      effect in GeSn wells of different thicknesses is
                      investigated. Theoretical calculations show strong quantum
                      confinement to be undesirable past a certain level, as the
                      very different effective masses of r and L electrons lead to
                      a decrease of the L-to Γ-valley energy difference. A main
                      limiting factor for lasing devices turns out to be the
                      defective region at the interface to the Ge substrate due to
                      the high lattice mismatch to GeSn. The use of buffer
                      technology and subsequent pseudomorphic growth of
                      multi-quantum-wells structures offers confinement of
                      carriers in the active material, far from the misfit
                      dislocations region. Performance is strongly boosted, as a
                      reduction of lasing thresholds from 300 kW/cm2 for bulk
                      devices to below 45 kW/cm2 in multi-quantum-well lasers is
                      observed at low temperatures, with the reduction in
                      threshold far outpacing the reduction in active gain
                      material volume.},
      month         = {Dec},
      date          = {2017-12-02},
      organization  = {2017 IEEE International Electron
                       Devices Meeting (IEDM), San Francisco
                       (CA), 2 Dec 2017 - 6 Dec 2017},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/IEDM.2017.8268451},
      url          = {https://juser.fz-juelich.de/record/849679},
}