%0 Journal Article
%A Assali, S.
%A Dijkstra, A.
%A Li, A.
%A Koelling, S.
%A Verheijen, M. A.
%A Gagliano, L.
%A von den Driesch, N.
%A Buca, D.
%A Koenraad, P. M.
%A Haverkort, J. E. M.
%A Bakkers, E. P. A. M.
%T Growth and Optical Properties of Direct Band Gap Ge/Ge 0.87 Sn 0.13 Core/Shell Nanowire Arrays
%J Nano letters
%V 17
%N 3
%@ 1530-6992
%C Washington, DC
%I ACS Publ.
%M FZJ-2018-03821
%P 1538 - 1544
%D 2017
%X Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:28165747
%U <Go to ISI:>//WOS:000396185800031
%R 10.1021/acs.nanolett.6b04627
%U https://juser.fz-juelich.de/record/849685