Journal Article

FZJ-2018-03821

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Growth and Optical Properties of Direct Band Gap Ge/Ge 0.87 Sn 0.13 Core/Shell Nanowire Arrays

Assali, S. (Corresponding author) ; Dijkstra, A. ; Li, A. ; Koelling, S. ; Verheijen, M. A. ; Gagliano, L. ; von den Driesch, N.FZJ* ; Buca, D.FZJ* ; Koenraad, P. M. ; Haverkort, J. E. M. ; Bakkers, E. P. A. M.

2017
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acs.nanolett.6b04627

Abstract: Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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