TY  - JOUR
AU  - Assali, S.
AU  - Dijkstra, A.
AU  - Li, A.
AU  - Koelling, S.
AU  - Verheijen, M. A.
AU  - Gagliano, L.
AU  - von den Driesch, N.
AU  - Buca, D.
AU  - Koenraad, P. M.
AU  - Haverkort, J. E. M.
AU  - Bakkers, E. P. A. M.
TI  - Growth and Optical Properties of Direct Band Gap Ge/Ge 0.87 Sn 0.13 Core/Shell Nanowire Arrays
JO  - Nano letters
VL  - 17
IS  - 3
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2018-03821
SP  - 1538 - 1544
PY  - 2017
AB  - Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices.
LB  - PUB:(DE-HGF)16
C6  - pmid:28165747
UR  - <Go to ISI:>//WOS:000396185800031
DO  - DOI:10.1021/acs.nanolett.6b04627
UR  - https://juser.fz-juelich.de/record/849685
ER  -