% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Assali:849685,
      author       = {Assali, S. and Dijkstra, A. and Li, A. and Koelling, S. and
                      Verheijen, M. A. and Gagliano, L. and von den Driesch, N.
                      and Buca, D. and Koenraad, P. M. and Haverkort, J. E. M. and
                      Bakkers, E. P. A. M.},
      title        = {{G}rowth and {O}ptical {P}roperties of {D}irect {B}and
                      {G}ap {G}e/{G}e 0.87 {S}n 0.13 {C}ore/{S}hell {N}anowire
                      {A}rrays},
      journal      = {Nano letters},
      volume       = {17},
      number       = {3},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2018-03821},
      pages        = {1538 - 1544},
      year         = {2017},
      abstract     = {Group IV semiconductor optoelectronic devices are now
                      possible by using strain-free direct band gap GeSn alloys
                      grown on a Ge/Si virtual substrate with Sn contents above
                      $9\%.$ Here, we demonstrate the growth of Ge/GeSn core/shell
                      nanowire arrays with Sn incorporation up to $13\%$ and
                      without the formation of Sn clusters. The nanowire geometry
                      promotes strain relaxation in the Ge0.87Sn0.13 shell and
                      limits the formation of structural defects. This results in
                      room-temperature photoluminescence centered at 0.465 eV and
                      enhanced absorption above $98\%.$ Therefore, direct band gap
                      GeSn grown in a nanowire geometry holds promise as a
                      low-cost and high-efficiency material for photodetectors
                      operating in the short-wave infrared and thermal imaging
                      devices.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:28165747},
      UT           = {WOS:000396185800031},
      doi          = {10.1021/acs.nanolett.6b04627},
      url          = {https://juser.fz-juelich.de/record/849685},
}