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| 001 | 849685 | ||
| 005 | 20210129234227.0 | ||
| 024 | 7 | _ | |a 10.1021/acs.nanolett.6b04627 |2 doi |
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| 100 | 1 | _ | |a Assali, S. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Growth and Optical Properties of Direct Band Gap Ge/Ge 0.87 Sn 0.13 Core/Shell Nanowire Arrays |
| 260 | _ | _ | |a Washington, DC |c 2017 |b ACS Publ. |
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| 520 | _ | _ | |a Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices. |
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| 773 | _ | _ | |a 10.1021/acs.nanolett.6b04627 |g Vol. 17, no. 3, p. 1538 - 1544 |0 PERI:(DE-600)2048866-X |n 3 |p 1538 - 1544 |t Nano letters |v 17 |y 2017 |x 1530-6992 |
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