%0 Journal Article
%A Glass, S.
%A von den Driesch, N.
%A Strangio, S.
%A Schulte-Braucks, C.
%A Rieger, T.
%A Narimani, K.
%A Buca, D.
%A Mantl, S.
%A Zhao, Q. T.
%T Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
%J Applied physics letters
%V 111
%N 26
%@ 1077-3118
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2018-03826
%P 263504 -
%D 2017
%X The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical predictions, it is confirmed that the on-current is governed by line tunneling scaling with the source-gate overlap area of our devices. Our analysis identifies the early onset of parasitic diagonal tunneling paths as most detrimental for a low average subthreshold swing. By counter doping the channel, this onset can be shifted favorably, permitting low average subthreshold swings down to 87 mV/dec over four decades of drain current and high on-off current ratios exceeding 106.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000418947200035
%R 10.1063/1.4996109
%U https://juser.fz-juelich.de/record/849690