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000849690 1001_ $$0P:(DE-Juel1)165997$$aGlass, S.$$b0$$eCorresponding author
000849690 245__ $$aExperimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
000849690 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2017
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000849690 520__ $$aThe benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical predictions, it is confirmed that the on-current is governed by line tunneling scaling with the source-gate overlap area of our devices. Our analysis identifies the early onset of parasitic diagonal tunneling paths as most detrimental for a low average subthreshold swing. By counter doping the channel, this onset can be shifted favorably, permitting low average subthreshold swings down to 87 mV/dec over four decades of drain current and high on-off current ratios exceeding 106.
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000849690 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b1
000849690 7001_ $$0P:(DE-HGF)0$$aStrangio, S.$$b2
000849690 7001_ $$0P:(DE-HGF)0$$aSchulte-Braucks, C.$$b3
000849690 7001_ $$0P:(DE-HGF)0$$aRieger, T.$$b4
000849690 7001_ $$0P:(DE-Juel1)164261$$aNarimani, K.$$b5
000849690 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b6
000849690 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b7
000849690 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b8
000849690 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4996109$$gVol. 111, no. 26, p. 263504 -$$n26$$p263504 -$$tApplied physics letters$$v111$$x1077-3118$$y2017
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