TY  - JOUR
AU  - Glass, S.
AU  - von den Driesch, N.
AU  - Strangio, S.
AU  - Schulte-Braucks, C.
AU  - Rieger, T.
AU  - Narimani, K.
AU  - Buca, D.
AU  - Mantl, S.
AU  - Zhao, Q. T.
TI  - Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
JO  - Applied physics letters
VL  - 111
IS  - 26
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2018-03826
SP  - 263504 -
PY  - 2017
AB  - The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical predictions, it is confirmed that the on-current is governed by line tunneling scaling with the source-gate overlap area of our devices. Our analysis identifies the early onset of parasitic diagonal tunneling paths as most detrimental for a low average subthreshold swing. By counter doping the channel, this onset can be shifted favorably, permitting low average subthreshold swings down to 87 mV/dec over four decades of drain current and high on-off current ratios exceeding 106.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000418947200035
DO  - DOI:10.1063/1.4996109
UR  - https://juser.fz-juelich.de/record/849690
ER  -