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024 7 _ |a 10.1063/1.4996109
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024 7 _ |a 1077-3118
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037 _ _ |a FZJ-2018-03826
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100 1 _ |a Glass, S.
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245 _ _ |a Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
260 _ _ |a Melville, NY
|c 2017
|b American Inst. of Physics
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520 _ _ |a The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical predictions, it is confirmed that the on-current is governed by line tunneling scaling with the source-gate overlap area of our devices. Our analysis identifies the early onset of parasitic diagonal tunneling paths as most detrimental for a low average subthreshold swing. By counter doping the channel, this onset can be shifted favorably, permitting low average subthreshold swings down to 87 mV/dec over four decades of drain current and high on-off current ratios exceeding 106.
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700 1 _ |a von den Driesch, N.
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700 1 _ |a Strangio, S.
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700 1 _ |a Schulte-Braucks, C.
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700 1 _ |a Rieger, T.
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700 1 _ |a Narimani, K.
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700 1 _ |a Buca, D.
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700 1 _ |a Mantl, S.
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700 1 _ |a Zhao, Q. T.
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773 _ _ |a 10.1063/1.4996109
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856 4 _ |y Published on 2017-12-27. Available in OpenAccess from 2018-12-27.
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856 4 _ |y Published on 2017-12-27. Available in OpenAccess from 2018-12-27.
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