TY  - JOUR
AU  - Fischer, Inga A
AU  - Berrier, Audrey
AU  - Hornung, Florian
AU  - Oehme, Michael
AU  - Zaumseil, Peter
AU  - Capellini, Giovanni
AU  - von den Driesch, Nils
AU  - Buca, Dan Mihai
AU  - Schulze, Jörg
TI  - Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content
JO  - Semiconductor science and technology
VL  - 32
IS  - 12
SN  - 1361-6641
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2018-03827
SP  - 124004 -
PY  - 2017
AB  - We extend the analysis of optical transition energies above 1.5 eV in ternary Si x Ge1−x−y Sn y alloys grown by molecular beam epitaxy to a composition range in which 1−x−y is as low as 0.405. Simple models for transition energies assume a quadratic dependence on material content. Comparing our results to existing predictions of the transition energies based on results obtained from samples with much lower Si and Sn content, however, we find a significant disagreement between experiment and theory, indicating that the assumption of a quadratic dependence might not be valid for the entire composition range of the ternary alloy.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000415159700001
DO  - DOI:10.1088/1361-6641/aa95d3
UR  - https://juser.fz-juelich.de/record/849691
ER  -