Journal Article

FZJ-2018-03827

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content

Fischer, I. A. (Corresponding author) ; Berrier, A. ; Hornung, F. ; Oehme, M. ; Zaumseil, P. ; Capellini, G. ; von den Driesch, N.FZJ* ; Buca, D. M.FZJ* ; Schulze, J.

2017
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/1361-6641/aa95d3

Abstract: We extend the analysis of optical transition energies above 1.5 eV in ternary Si x Ge1−x−y Sn y alloys grown by molecular beam epitaxy to a composition range in which 1−x−y is as low as 0.405. Simple models for transition energies assume a quadratic dependence on material content. Comparing our results to existing predictions of the transition energies based on results obtained from samples with much lower Si and Sn content, however, we find a significant disagreement between experiment and theory, indicating that the assumption of a quadratic dependence might not be valid for the entire composition range of the ternary alloy.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; National-Konsortium ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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