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| 001 | 849691 | ||
| 005 | 20210129234230.0 | ||
| 024 | 7 | _ | |a 10.1088/1361-6641/aa95d3 |2 doi |
| 024 | 7 | _ | |a 0268-1242 |2 ISSN |
| 024 | 7 | _ | |a 1361-6641 |2 ISSN |
| 024 | 7 | _ | |a WOS:000415159700001 |2 WOS |
| 037 | _ | _ | |a FZJ-2018-03827 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Fischer, Inga A |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content |
| 260 | _ | _ | |a Bristol |c 2017 |b IOP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1532939408_25862 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a We extend the analysis of optical transition energies above 1.5 eV in ternary Si x Ge1−x−y Sn y alloys grown by molecular beam epitaxy to a composition range in which 1−x−y is as low as 0.405. Simple models for transition energies assume a quadratic dependence on material content. Comparing our results to existing predictions of the transition energies based on results obtained from samples with much lower Si and Sn content, however, we find a significant disagreement between experiment and theory, indicating that the assumption of a quadratic dependence might not be valid for the entire composition range of the ternary alloy. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |a Berrier, Audrey |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Hornung, Florian |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Oehme, Michael |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Zaumseil, Peter |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Capellini, Giovanni |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a von den Driesch, Nils |0 P:(DE-Juel1)161247 |b 6 |
| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 7 |
| 700 | 1 | _ | |a Schulze, Jörg |0 P:(DE-HGF)0 |b 8 |
| 773 | _ | _ | |a 10.1088/1361-6641/aa95d3 |g Vol. 32, no. 12, p. 124004 - |0 PERI:(DE-600)1361285-2 |n 12 |p 124004 - |t Semiconductor science and technology |v 32 |y 2017 |x 1361-6641 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/849691/files/Fischer_2017_Semicond._Sci._Technol._32_124004.pdf |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/849691/files/Fischer_2017_Semicond._Sci._Technol._32_124004.gif?subformat=icon |x icon |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/849691/files/Fischer_2017_Semicond._Sci._Technol._32_124004.jpg?subformat=icon-1440 |x icon-1440 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/849691/files/Fischer_2017_Semicond._Sci._Technol._32_124004.jpg?subformat=icon-180 |x icon-180 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/849691/files/Fischer_2017_Semicond._Sci._Technol._32_124004.jpg?subformat=icon-640 |x icon-640 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/849691/files/Fischer_2017_Semicond._Sci._Technol._32_124004.pdf?subformat=pdfa |x pdfa |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:849691 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)161247 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)125569 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2018 |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a National-Konsortium |0 StatID:(DE-HGF)0430 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b SEMICOND SCI TECH : 2015 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0600 |2 StatID |b Ebsco Academic Search |
| 915 | _ | _ | |a Peer Review |0 StatID:(DE-HGF)0030 |2 StatID |b ASC |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
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