Contribution to a conference proceedings

FZJ-2018-03834

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures

Stange, D. (Corresponding author)FZJ* ; von den Driesch, N.FZJ* ; Zabel, T. ; Armand-Pilon, F. ; Marzban, B. ; Rainko, D.FZJ* ; Hartmann, J.-M. ; Capellini, G. ; Schroeder, T. ; Sigg, H. ; Witzens, J. ; Grutzmacher, D.FZJ* ; Buca, D.FZJ*

2017
IEEE

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Please use a persistent id in citations: doi:10.1109/GROUP4.2017.8082173

Abstract: We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparison between double heterostructure and multi-quantum-well microdisk cavities reveals advantages of the multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices are observed.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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