%0 Journal Article
%A Carvalho, Daniel
%A Müller-Caspary, Knut
%A Schowalter, Marco
%A Grieb, Tim
%A Mehrtens, Thorsten
%A Rosenauer, Andreas
%A Garcia, Rafale Ben Teresa
%A Redondo-Cubero, Andres
%A Lorenz, Katharina
%A Daudin, Bruno
%A Morales, Francisco M.
%T Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction
%J Scientific reports
%V 6
%@ 2045-2322
%C London
%I Nature Publishing Group
%M FZJ-2018-04270
%P 28459
%D 2016
%X The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:27350322
%U <Go to ISI:>//WOS:000378786800001
%R 10.1038/srep28459
%U https://juser.fz-juelich.de/record/850196