Journal Article

FZJ-2018-04270

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

Carvalho, D. (Corresponding author) ; Müller-Caspary, K.FZJ* ; Schowalter, M. ; Grieb, T. ; Mehrtens, T. ; Rosenauer, A. ; Garcia, R. B. T. ; Redondo-Cubero, A. ; Lorenz, K. ; Daudin, B. ; Morales, F. M.

2016
Nature Publishing Group London

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Please use a persistent id in citations: http://hdl.handle.net/2128/19378  doi:10.1038/srep28459

Abstract: The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.

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Contributing Institute(s):

1. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

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