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000850196 1001_ $$0P:(DE-HGF)0$$aCarvalho, Daniel$$b0$$eCorresponding author
000850196 245__ $$aDirect Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction
000850196 260__ $$aLondon$$bNature Publishing Group$$c2016
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000850196 520__ $$aThe built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.
000850196 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000850196 7001_ $$0P:(DE-Juel1)165314$$aMüller-Caspary, Knut$$b1
000850196 7001_ $$0P:(DE-HGF)0$$aSchowalter, Marco$$b2
000850196 7001_ $$0P:(DE-HGF)0$$aGrieb, Tim$$b3
000850196 7001_ $$0P:(DE-HGF)0$$aMehrtens, Thorsten$$b4
000850196 7001_ $$0P:(DE-HGF)0$$aRosenauer, Andreas$$b5
000850196 7001_ $$0P:(DE-HGF)0$$aGarcia, Rafale Ben Teresa$$b6
000850196 7001_ $$0P:(DE-HGF)0$$aRedondo-Cubero, Andres$$b7
000850196 7001_ $$0P:(DE-HGF)0$$aLorenz, Katharina$$b8
000850196 7001_ $$0P:(DE-HGF)0$$aDaudin, Bruno$$b9
000850196 7001_ $$0P:(DE-HGF)0$$aMorales, Francisco M.$$b10
000850196 773__ $$0PERI:(DE-600)2615211-3$$a10.1038/srep28459$$p28459$$tScientific reports$$v6$$x2045-2322$$y2016
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