TY  - JOUR
AU  - Carvalho, Daniel
AU  - Müller-Caspary, Knut
AU  - Schowalter, Marco
AU  - Grieb, Tim
AU  - Mehrtens, Thorsten
AU  - Rosenauer, Andreas
AU  - Garcia, Rafale Ben Teresa
AU  - Redondo-Cubero, Andres
AU  - Lorenz, Katharina
AU  - Daudin, Bruno
AU  - Morales, Francisco M.
TI  - Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction
JO  - Scientific reports
VL  - 6
SN  - 2045-2322
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2018-04270
SP  - 28459
PY  - 2016
AB  - The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.
LB  - PUB:(DE-HGF)16
C6  - pmid:27350322
UR  - <Go to ISI:>//WOS:000378786800001
DO  - DOI:10.1038/srep28459
UR  - https://juser.fz-juelich.de/record/850196
ER  -