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@ARTICLE{Carvalho:850196,
author = {Carvalho, Daniel and Müller-Caspary, Knut and Schowalter,
Marco and Grieb, Tim and Mehrtens, Thorsten and Rosenauer,
Andreas and Garcia, Rafale Ben Teresa and Redondo-Cubero,
Andres and Lorenz, Katharina and Daudin, Bruno and Morales,
Francisco M.},
title = {{D}irect {M}easurement of {P}olarization-{I}nduced {F}ields
in {G}a{N}/{A}l{N} by {N}ano-{B}eam {E}lectron
{D}iffraction},
journal = {Scientific reports},
volume = {6},
issn = {2045-2322},
address = {London},
publisher = {Nature Publishing Group},
reportid = {FZJ-2018-04270},
pages = {28459},
year = {2016},
abstract = {The built-in piezoelectric fields in group III-nitrides can
act as road blocks on the way to maximizing the efficiency
of opto-electronic devices. In order to overcome this
limitation, a proper characterization of these fields is
necessary. In this work nano-beam electron diffraction in
scanning transmission electron microscopy mode has been used
to simultaneously measure the strain state and the induced
piezoelectric fields in a GaN/AlN multiple quantum well
system.},
cin = {ER-C-1},
ddc = {000},
cid = {I:(DE-Juel1)ER-C-1-20170209},
pnm = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
pid = {G:(DE-HGF)POF3-143},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:27350322},
UT = {WOS:000378786800001},
doi = {10.1038/srep28459},
url = {https://juser.fz-juelich.de/record/850196},
}